ROHM Semiconductor RQ6L035ATTCR P沟MOSFET -60V -3.5A 功率MOSFET

Fall Time: 45 ns

Rise Time: 12 ns

Technology: Si

Channel Mode: Enhancement

REACH - SVHC: Details

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: 1 P - Channel

Qg - Gate Charge: 22 nC

Number of Channels: 1 Channel

Transistor Polarity: P-Channel

Pd - Power Dissipation: 1.25 W

Vgs - Gate-Source Voltage: - 10 V, + 10 V

Typical Turn-On Delay Time: 9.5 ns

Typical Turn-Off Delay Time: 70 ns

Id - Continuous Drain Current: 3.5 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 4.5 S

Rds On - Drain-Source Resistance: 78 mOhms

Vds - Drain-Source Breakdown Voltage: 60 V

Vgs th - Gate-Source Threshold Voltage: 2.5 V