ROHM Semiconductor RSH100N03TB1 N沟MOSFET 30V 10A MOSFET

Technology: Si

Unit Weight: 83 mg

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: 1 N-Channel

Qg - Gate Charge: 14 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 2 W

Id - Continuous Drain Current: 10 A

Rds On - Drain-Source Resistance: 9.5 mOhms

Vds - Drain-Source Breakdown Voltage: 30 V