ROHM Semiconductor RSS070P05HZGTB MOSFETs AECQ

Fall Time: 50 ns

Rise Time: 35 ns

Technology: Si

Channel Mode: Enhancement

Configuration: Single

Qualification: AEC-Q101

Mounting Style: SMD/SMT

Transistor Type: Power MOSFET

Qg - Gate Charge: 34 nC

Number of Channels: 1 Channel

Transistor Polarity: P-Channel

Pd - Power Dissipation: 2 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 31 ns

Typical Turn-Off Delay Time: 135 ns

Id - Continuous Drain Current: 7 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 10 S

Rds On - Drain-Source Resistance: 27 mOhms

Vds - Drain-Source Breakdown Voltage: 45 V

Vgs th - Gate-Source Threshold Voltage: 2.5 V