ROHM Semiconductor RX3G18BGNC16 N沟MOSFET 40V 180A，TO-220AB，功率MOSFET

Fall Time: 291 ns

Rise Time: 25 ns

Technology: Si

Channel Mode: Enhancement

Configuration: Single

Mounting Style: Through Hole

Transistor Type: Power MOSFET

Qg - Gate Charge: 168 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 125 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 47 ns

Typical Turn-Off Delay Time: 282 ns

Id - Continuous Drain Current: 180 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 140 S

Rds On - Drain-Source Resistance: 1.64 mOhms

Vds - Drain-Source Breakdown Voltage: 40 V

Vgs th - Gate-Source Threshold Voltage: 2.5 V