ROHM Semiconductor RX3N10BBHC16 MOSFETs TO220 N 通道 80V

Fall Time: 340 ns

Rise Time: 66 ns

Technology: Si

Channel Mode: Enhancement

Configuration: Single

Mounting Style: Through Hole

Transistor Type: 1 N-Channel

Qg - Gate Charge: 185 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 189 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 58 ns

Typical Turn-Off Delay Time: 250 ns

Id - Continuous Drain Current: 225 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 55 S

Rds On - Drain-Source Resistance: 2.2 mOhms

Vds - Drain-Source Breakdown Voltage: 80 V

Vgs th - Gate-Source Threshold Voltage: 4 V