ROHM Semiconductor RYE002N05TCL 功率MOSFET 0.9V驱动N沟MOSFET

Width: 0.8 mm

Height: 0.7 mm

Length: 1.6 mm

Fall Time: 43 ns

Rise Time: 8 ns

Technology: Si

Unit Weight: 6 mg

Channel Mode: Enhancement

REACH - SVHC: Details

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: 1 N-channel

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 150 mW

Vgs - Gate-Source Voltage: - 8 V, + 8 V

Typical Turn-On Delay Time: 5 ns

Typical Turn-Off Delay Time: 17 ns

Id - Continuous Drain Current: 200 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 200 mS

Rds On - Drain-Source Resistance: 2.2 Ohms

Vds - Drain-Source Breakdown Voltage: 50 V

Vgs th - Gate-Source Threshold Voltage: 800 mV