ROHM Semiconductor S2301USCZSAGG N沟道SiC功率MOSFET

Channel Type: N Channel

Transistor Case Style: DIE

Drain Source Voltage Vds: 1.2

Operating Temperature Max: 175 °C

Continuous Drain Current Id: 40

Mosfet Module Configuration: Single

Drain Source On State Resistance: 111

Gate Source Threshold Voltage Max: 4

Datasheet