ROHM Semiconductor SCS212AGHRC 肖特基碳化硅二极管 650V 12ASiC SBD AEC-Q101 认证

Technology: SiC

Unit Weight: 1.800 g

REACH - SVHC: Details

Configuration: Single

Qualification: AEC-Q101

Mounting Style: Through Hole

If - Forward Current: 12 A

Ir - Reverse Current: 240 uA

Vf - Forward Voltage: 1.55 V

Vr - Reverse Voltage: 650 V

Pd - Power Dissipation: 93 W

Ifsm - Forward Surge Current: 43 A

Maximum Operating Temperature: + 175 C

Vrrm - Repetitive Reverse Voltage: 650 V