ROHM Semiconductor SH8JC5TB1 MOSFETs -60V 双P沟道+P沟道，SOP8，功率MOSFET

Fall Time: 74 ns

Rise Time: 30 ns

Technology: Si

Unit Weight: 83 mg

Channel Mode: Enhancement

Configuration: Dual

Mounting Style: SMD/SMT

Transistor Type: 2 P-Channel

Qg - Gate Charge: 50 nC

Number of Channels: 2 Channel

Transistor Polarity: P-Channel

Pd - Power Dissipation: 2 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 14 ns

Typical Turn-Off Delay Time: 130 ns

Id - Continuous Drain Current: 7.5 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 11 S

Rds On - Drain-Source Resistance: 32 mOhms

Vds - Drain-Source Breakdown Voltage: 60 V

Vgs th - Gate-Source Threshold Voltage: 2.5 V