ROHM Semiconductor SH8K1TB1 MOSFETs N沟+N沟 30V 5A MOSFET

Technology: Si

Unit Weight: 83 mg

Configuration: Dual

Mounting Style: SMD/SMT

Transistor Type: 2 N-Channel

Qg - Gate Charge: 3.9 nC

Number of Channels: 2 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 2 W

Id - Continuous Drain Current: 5 A

Rds On - Drain-Source Resistance: 36 mOhms

Vds - Drain-Source Breakdown Voltage: 30 V