ROHM Semiconductor SH8K2TB1 MOSFETs Nch+Nch 30V 6A MOSFET

Technology: Si

Unit Weight: 83 mg

Configuration: Dual

Mounting Style: SMD/SMT

Transistor Type: 2 N-Channel

Qg - Gate Charge: 7.2 nC

Number of Channels: 2 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 2 W

Id - Continuous Drain Current: 6 A

Rds On - Drain-Source Resistance: 21 mOhms

Vds - Drain-Source Breakdown Voltage: 30 V