ROHM Semiconductor SH8M14TB1 MOSFETs 4V 驱动型 N/P 通道 中功率 MOSFET

Fall Time: 10 ns, 65 ns

Rise Time: 33 ns, 40 ns

Technology: Si

Unit Weight: 83 mg

Channel Mode: Enhancement

Configuration: Dual

Mounting Style: SMD/SMT

Transistor Type: 1 N-Channel, 1 P-Channel

Qg - Gate Charge: 8.5 nC, 18 nC

Number of Channels: 2 Channel

Transistor Polarity: N-Channel, P-Channel

Pd - Power Dissipation: 2 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 10 ns, 12 ns

Typical Turn-Off Delay Time: 42 ns, 80 ns

Id - Continuous Drain Current: 9 A, 7 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 15 mOhms, 21.5 mOhms

Vds - Drain-Source Breakdown Voltage: 30 V

Vgs th - Gate-Source Threshold Voltage: 1 V, 2.5 V