ROHM Semiconductor SH8M3TB1 MOSFETs N沟+P沟 30V/-30V 5A/-4.5A; MOSFET

Technology: Si

Unit Weight: 83 mg

Configuration: Dual

Mounting Style: SMD/SMT

Transistor Type: 1 N-Channel, 1 P-Channel

Number of Channels: 2 Channel

Transistor Polarity: N-Channel, P-Channel

Pd - Power Dissipation: 2 W

Id - Continuous Drain Current: 5 A

Maximum Operating Temperature: + 150 C

Forward Transconductance - Min: 3 S

Rds On - Drain-Source Resistance: 58 mOhms

Vds - Drain-Source Breakdown Voltage: 30 V