ROHM Semiconductor SP8J5TB MOSFETs 反型 P沟道 30V 7A 8脚 SOP T-R

Width: 4.4 mm

Height: 1.5 mm

Length: 5 mm

Technology: Si

Unit Weight: 83 mg

Configuration: Dual

Mounting Style: SMD/SMT

Transistor Type: 2 P-Channel

Qg - Gate Charge: 25 nC

Number of Channels: 2 Channel

Transistor Polarity: P-Channel

Pd - Power Dissipation: 2 W

Id - Continuous Drain Current: 7 A

Rds On - Drain-Source Resistance: 20 mOhms

Vds - Drain-Source Breakdown Voltage: 30 V