ROHM Semiconductor SP8M4FRATB MOSFETs N沟+P沟 30V Vds 9A 0.017Rds(on) 15Qg

Fall Time: 22 ns, 70 ns

Rise Time: 15 ns, 50 ns

Technology: Si

Unit Weight: 83 mg

Channel Mode: Enhancement

Configuration: Dual

Qualification: AEC-Q101

Mounting Style: SMD/SMT

Transistor Type: 1 N-Channel, 1 P-Channel

Qg - Gate Charge: 15 nC, 25 nC

Number of Channels: 2 Channel

Transistor Polarity: N-Channel, P-Channel

Pd - Power Dissipation: 2 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 10 ns, 20 ns

Typical Turn-Off Delay Time: 55 ns, 110 ns

Id - Continuous Drain Current: 9 A, 7 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 6 S, 7 S

Rds On - Drain-Source Resistance: 12 mOhms, 20 mOhms

Vds - Drain-Source Breakdown Voltage: 30 V

Vgs th - Gate-Source Threshold Voltage: 2.5 V, 2.5 V