ROHM Semiconductor SST3904T116 双极晶体管 40V 20MA

Width: 1.3 mm

Height: 0.95 mm

Length: 2.9 mm

Technology: Si

Unit Weight: 29 mg

Configuration: Single

Mounting Style: SMD/SMT

Transistor Polarity: NPN

Pd - Power Dissipation: 350 mW

DC Current Gain hFE Max: 300 at 10 mA, 1 V

Gain Bandwidth Product fT: 300 MHz

Emitter- Base Voltage VEBO: 6 V

Collector- Base Voltage VCBO: 60 V

Continuous Collector Current: 200 mA

Maximum Operating Temperature: + 150 C

DC Collector/Base Gain hfe Min: 30 at 100 mA, 1 V

Collector- Emitter Voltage VCEO Max: 40 V

Collector-Emitter Saturation Voltage: 300 mV