ROHM Semiconductor SSTA06T116 双极型晶体管 NPN 80V 0.5A

Width: 1.3 mm

Height: 0.95 mm

Length: 2.9 mm

Technology: Si

Unit Weight: 29 mg

Configuration: Single

Mounting Style: SMD/SMT

Transistor Polarity: NPN

Pd - Power Dissipation: 350 mW

Gain Bandwidth Product fT: 100 MHz

Emitter- Base Voltage VEBO: 4 V

Collector- Base Voltage VCBO: 80 V

Continuous Collector Current: 500 mA

Maximum Operating Temperature: + 150 C

DC Collector/Base Gain hfe Min: 100 at 100 mA. 1 V

Collector- Emitter Voltage VCEO Max: 80 V

Collector-Emitter Saturation Voltage: 250 mV