ROHM Semiconductor SSTA28T116 达林顿晶体管 NPN 80V 0.3A

Width: 1.3 mm

Height: 0.95 mm

Length: 2.9 mm

Unit Weight: 8 mg

Configuration: Single

Mounting Style: SMD/SMT

Transistor Polarity: NPN

Pd - Power Dissipation: 200 mW

DC Current Gain hFE Max: 10000

Gain Bandwidth Product fT: 200 MHz

Emitter- Base Voltage VEBO: 12 V

Collector- Base Voltage VCBO: 80 V

Continuous Collector Current: 300 mA

Maximum Operating Temperature: + 150 C

DC Collector/Base Gain hfe Min: 10000 at 100 mA, 5 V

Maximum Collector Cut-off Current: 100 nA

Collector- Emitter Voltage VCEO Max: 80 V