ROHM Semiconductor UT6MB5TCR MOSFETs UT6MB5 是一种低导通电阻的MOSFET，适用于开关应用。

Fall Time: 2.7 ns, 18 ns

Rise Time: 4.7 ns, 8.5 ns

Technology: Si

Channel Mode: Enhancement

Configuration: Dual

Mounting Style: SMD/SMT

Transistor Type: 1 N-Channel, 1 P-Channel

Qg - Gate Charge: 3.5 nC, 6.2 nC

Number of Channels: 2 Channel

Transistor Polarity: N-Channel, P-Channel

Pd - Power Dissipation: 2 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 5 ns, 7.4 ns

Typical Turn-Off Delay Time: 11 ns, 42 ns

Id - Continuous Drain Current: 5 A, 3.5 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 1.3 S, 2.6 S

Rds On - Drain-Source Resistance: 48 mOhms, 122 mOhms

Vds - Drain-Source Breakdown Voltage: 40 V

Vgs th - Gate-Source Threshold Voltage: 2.5 V