SemiQ GCMX020A120B3H1P 全桥SiC 1200V 20mohm MOSFET全桥模块

Fall Time: 18 ns

Rise Time: 10 ns

Technology: SiC

Mounting Style: Screw Mount

Transistor Polarity: N-Channel

Pd - Power Dissipation: 300 W

Vgs - Gate-Source Voltage: - 5 V, + 20 V

Typical Turn-On Delay Time: 26 ns

Typical Turn-Off Delay Time: 46 ns

Id - Continuous Drain Current: 93 A

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 40 C

Rds On - Drain-Source Resistance: 18.1 mOhms

Vds - Drain-Source Breakdown Voltage: 1.2 kV

Vgs th - Gate-Source Threshold Voltage: 1.8 V