SemiQ GCMX040A120B3H1P 全桥SiC 1200V 40mΩ MOSFET全桥模块

Fall Time: 12 ns

Rise Time: 6 ns

Technology: SiC

REACH - SVHC: Details

Mounting Style: Press Fit

Transistor Polarity: N-Channel

Pd - Power Dissipation: 208 W

Vgs - Gate-Source Voltage: - 5 V, + 20 V

Typical Turn-On Delay Time: 16 ns

Typical Turn-Off Delay Time: 25 ns

Id - Continuous Drain Current: 53 A

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 40 C

Rds On - Drain-Source Resistance: 38 mOhms

Vds - Drain-Source Breakdown Voltage: 1.2 kV

Vgs th - Gate-Source Threshold Voltage: 1.8 V