SemiQ GCMX040B120S1-E1 MOSFET模块 1200V SiC MOSFET功率模块

Fall Time: 12 ns

Rise Time: 5 ns

Technology: SiC

REACH - SVHC: Details

Mounting Style: Screw Mount

Transistor Polarity: N-Channel

Vf - Forward Voltage: 3.8 V

Pd - Power Dissipation: 242 W

Vgs - Gate-Source Voltage: - 25 V, + 25 V

Typical Turn-On Delay Time: 15 ns

Typical Turn-Off Delay Time: 21 ns

Id - Continuous Drain Current: 57 A

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 52 mOhms

Vds - Drain-Source Breakdown Voltage: 1.2 kV

Vgs th - Gate-Source Threshold Voltage: 4 V