SemiQ GP2T040A120H SiC MOSFETS SiC MOSFET 1200V 40毫欧 TO-247-4L

Fall Time: 14 ns

Rise Time: 5 ns

Technology: SiC

REACH - SVHC: Details

Configuration: Single

Mounting Style: Through Hole

Qg - Gate Charge: 118 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 322 W

Vgs - Gate-Source Voltage: - 10 V, + 25 V

Typical Turn-On Delay Time: 14 ns

Typical Turn-Off Delay Time: 23 ns

Id - Continuous Drain Current: 63 A

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 16 S

Rds On - Drain-Source Resistance: 37 mOhms

Vds - Drain-Source Breakdown Voltage: 1.2 kV

Vgs th - Gate-Source Threshold Voltage: 4 V