Shindengen P3F60HP2-5600 MOSFET 高速开关 高电压

Technology: Si

Unit Weight: 2 g

Channel Mode: Enhancement

REACH - SVHC: Details

Mounting Style: Through Hole

Qg - Gate Charge: 10 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 52.5 W

Vgs - Gate-Source Voltage: - 30 V, + 30 V

Id - Continuous Drain Current: 3 A

Maximum Operating Temperature: + 150 C

Rds On - Drain-Source Resistance: 2.3 Ohms

Vds - Drain-Source Breakdown Voltage: 600 V

Vgs th - Gate-Source Threshold Voltage: 4.5 V