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Soldered 108790 通用MOSFET,普通型,P沟道,MOSFET,晶体管,TO-220

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Technology: Si

Unit Weight: 4 g

Mounting Style: Through Hole

Transistor Polarity: P-Channel

Id - Continuous Drain Current: 23 A

Rds On - Drain-Source Resistance: 117 mOhms

Vds - Drain-Source Breakdown Voltage: 100 V

Vgs th - Gate-Source Threshold Voltage: 2 V

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