Stanford SIM910 JFET 前置放大器 (DC - 1 MHz, 1 - 100)

Frequency range: DC to 1 MHz

Gain: 1 to 100 (1-2-5 sequence)

Gain accuracy:

±0.5 % (DC to 100 kHz)

±5 % (<1 MHz)

Gain stability: 200 ppm/°C

Input noise (typ.): 4 nV/√Hz at 1 kHz (SIM910)

Input impedance: 100 MΩ // 35 pF (SIM910)

Input bias current (DC coupled): 0.5 pA (typ.) (SIM910)

AC coupling freq. (-3dB): 16 mHz (SIM910)

Input selection: A, A-B or GND

Input coupling: AC or DC

Input shields: Floating or ground

Maximum input: ±1 V differential, ±5 V common mode

Maximum output: ±10 V

Common mode rejection: 85 dB at 1 kHz

Operating temperature: 0 °C to 40 °C (non-condensing)

Interface: Serial via SIM interface

Connectors: BNC (3 front, 1 rear); DB15 (male) SIM interface

Power: Power supplied by the SIM900 Mainframe, or optionally by a user-supplied DC power supply (±15 V and +5 V)

Dimensions: 1.5" × 3.6" × 7.0" (WHL)

Weight: 1.5 lbs

Datasheet

Manual