Stanford SIM984 隔离放大器 (±1000 V, 100 Hz~1 MHz)

Isolation voltage: ±1000 V (max)

Leakage current: <2 µA at 1000 VDC

Isolation capacitance: 1000 pF

IMRR: 150 dB (DC)

Max. input: ±10 V

Input Impedance: 1 MΩ

Input noise (typ.): 15 nV/√Hz at 1 kHz

Input offset drift: 3 µV/°C (typ)

Output voltage range: ±10 V

Output current: ±20 mA (max)

Output resistance: 50 Ω

Output offset: ±0.1 V, adjustable

Output offset drift: 1 mV/°C (typ.)

Output noise:

80 µVrms (100 Hz bandwidth)

200 µVrms (10 kHz bandwidth)

1.5 mVrms (1 MHz bandwidth)

Gain: x1, x10, x100

Gain error: ±0.5 %

THD: 0.005 % (at 1 kHz, 600 Ω load)

Frequency range:

DC to 100 Hz (Low BW)

DC to 10 kHz (Mediate BW)

DC to 1 MHz (High BW)

Rise time: 300 ns (Vout = 4 V)

Slew rate: 25 V/µs (Vout = 20 Vpp)

Interface: Serial via SIM interface

Connectors:

Banana jacks (2 front-panel),

BNC (1 front-panel),

BNC (1 rear-panel)

DB15 (male) SIM interface

Power: Power supplied by the SIM900 Mainframe, or optionally by a user-supplied DC power supply (±15 V, +5 V, and +24 V).

Dimensions: 1.5" × 3.6" × 7.0" (WHL)

Weight: 1.5 lbs.

Datasheet

Manual