STMicroelectronics 2STD1665T4 双极型晶体管 BJTs 150V Vcbo 65V Vceo 6A NPN 低电压

Width: 6.2 mm

Height: 2.4 mm

Length: 6.6 mm

Technology: Si

Unit Weight: 260.400 mg

Configuration: Single

Mounting Style: SMD/SMT

Transistor Polarity: NPN

Pd - Power Dissipation: 15 W

Emitter- Base Voltage VEBO: 7 V

Collector- Base Voltage VCBO: 150 V

Maximum DC Collector Current: 6 A

Maximum Operating Temperature: + 150 C

DC Collector/Base Gain hfe Min: 150

Collector- Emitter Voltage VCEO Max: 65 V

Collector-Emitter Saturation Voltage: 230 mV