STMicroelectronics A1F25M12W2-F1 MOSFET模块ACEPACK 1功率模块，四合一拓扑，1200 V，典型25 mOhm。SiC MOSFET NTC

Technology: SiC

Unit Weight: 25 g

Mounting Style: Press Fit

Transistor Polarity: N-Channel

Vgs - Gate-Source Voltage: - 10 V, + 22 V

Typical Turn-On Delay Time: 24 ns

Typical Turn-Off Delay Time: 32 ns

Id - Continuous Drain Current: 50 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 40 C

Rds On - Drain-Source Resistance: 34 mOhms

Vds - Drain-Source Breakdown Voltage: 1.2 kV

Vgs th - Gate-Source Threshold Voltage: 4.9 V