STMicroelectronics A1P25S12M3 IGBT模块 ACEPACK 1 六管拓扑结构，1200 V，25 A，沟槽栅场停止IGBT M系列

Technology: Si

Unit Weight: 25 g

Configuration: 6-Pack

Mounting Style: Through Hole

Pd - Power Dissipation: 197 W

Gate-Emitter Leakage Current: 500 nA

Maximum Gate Emitter Voltage: 20 V

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 40 C

Collector- Emitter Voltage VCEO Max: 1.2 kV

Collector-Emitter Saturation Voltage: 1.95 V

Continuous Collector Current at 25 C: 25 A