STMicroelectronics A2C35S12M3 IGBT模块ACEPACK 2转换器逆变器制动，1200 V，35 A沟槽门场停止IGBT M s

Technology: Si

Unit Weight: 42 g

Configuration: Converter Inverter Brake

Mounting Style: Through Hole

Pd - Power Dissipation: 250 W

Gate-Emitter Leakage Current: 500 nA

Maximum Gate Emitter Voltage: 20 V

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 40 C

Collector- Emitter Voltage VCEO Max: 1.2 kV

Collector-Emitter Saturation Voltage: 1.95 V

Continuous Collector Current at 25 C: 35 A