STMicroelectronics A2C50S65M2-F IGBT模块ACEPACK 2转换器逆变器制动，650 V，50 A沟槽门场停止IGBT M se

Technology: Si

Unit Weight: 42 g

Configuration: CIB

Mounting Style: Screw Mount

Pd - Power Dissipation: 208 W

Gate-Emitter Leakage Current: 500 nA

Maximum Gate Emitter Voltage: 20 V

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 40 C

Collector- Emitter Voltage VCEO Max: 650 V

Collector-Emitter Saturation Voltage: 1.95 V

Continuous Collector Current at 25 C: 50 A