STMicroelectronics A2P75S12M3 IGBT模块 ACEPACK 2 六管拓扑结构，1200 V，75 A 沟槽门场停止IGBT M系列，s

Technology: Si

Unit Weight: 42 g

Configuration: 6-Pack

Mounting Style: Through Hole

Pd - Power Dissipation: 454.5 W

Gate-Emitter Leakage Current: 500 nA

Maximum Gate Emitter Voltage: 20 V

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 40 C

Collector- Emitter Voltage VCEO Max: 1.2 kV

Collector-Emitter Saturation Voltage: 1.95 V

Continuous Collector Current at 25 C: 75 A