STMicroelectronics ADP360120W3 SiC功率MOSFET模块 汽车级ACEPACK DRIVE功率模块 六管1200V 2.55mOhm SiC MOSFET

Technology: SiC

Unit Weight: 730 g

Mounting Style: Screw Mount

Vf - Forward Voltage: 4.3 V

Pd - Power Dissipation: 704 W

Vgs - Gate-Source Voltage: - 10 V, + 22 V

Id - Continuous Drain Current: 379 A

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 40 C

Rds On - Drain-Source Resistance: 2.55 mOhms

Vds - Drain-Source Breakdown Voltage: 1.2 kV

Vgs th - Gate-Source Threshold Voltage: 4.4 V