STMicroelectronics ADP46075W3 SiC MOSFET-二极管模块 汽车级 ACEPACK DRIVE 功率模块 六管拓扑 750 V 1.6 mOhm

Technology: SiC

Unit Weight: 730 g

Mounting Style: Press Fit

Transistor Polarity: N-Channel

Pd - Power Dissipation: 704 W

Vgs - Gate-Source Voltage: - 10 V, + 22 V

Id - Continuous Drain Current: 485 A

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 40 C

Rds On - Drain-Source Resistance: 2.05 mOhms

Vds - Drain-Source Breakdown Voltage: 750 V

Vgs th - Gate-Source Threshold Voltage: 1.9 V