STMicroelectronics BUB941ZTT4 达林顿晶体管 NPN 功率达林顿

Width: 9.35 mm

Height: 4.6 mm

Length: 10.4 mm

Unit Weight: 2 g

Configuration: Single

Qualification: AEC-Q100

Mounting Style: SMD/SMT

Transistor Polarity: NPN

Pd - Power Dissipation: 150 W

Emitter- Base Voltage VEBO: 5 V

Continuous Collector Current: 15 A

Maximum DC Collector Current: 15 A

Maximum Operating Temperature: + 150 C

DC Collector/Base Gain hfe Min: 300

Collector- Emitter Voltage VCEO Max: 350 V