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Width: 4.6 mm
Height: 9.15 mm
Length: 10.4 mm
Technology: Si
Unit Weight: 2.300 g
Configuration: Single
Mounting Style: Through Hole
Transistor Polarity: NPN
Pd - Power Dissipation: 100 W
Emitter- Base Voltage VEBO: 9 V
Collector- Base Voltage VCBO: 1.2 kV
Maximum DC Collector Current: 5 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 65 C
Collector- Emitter Voltage VCEO Max: 550 V
Collector-Emitter Saturation Voltage: 1.5 V
