STMicroelectronics BUL741 双极晶体管 BJTs - 功率双极/小信号

Width: 4.6 mm

Height: 9.15 mm

Length: 10.4 mm

Technology: Si

Unit Weight: 2.300 g

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: NPN

Pd - Power Dissipation: 60 W

Emitter- Base Voltage VEBO: 15 V

Maximum DC Collector Current: 2.5 A

Maximum Operating Temperature: + 150 C

DC Collector/Base Gain hfe Min: 48

Collector- Emitter Voltage VCEO Max: 400 V

Collector-Emitter Saturation Voltage: 500 mV