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Width: 5.7 mm
Height: 16.5 mm
Length: 15.7 mm
Technology: Si
Unit Weight: 8.437 g
Configuration: Single
Mounting Style: Through Hole
Transistor Polarity: NPN
Pd - Power Dissipation: 75 W
Emitter- Base Voltage VEBO: 10 V
Maximum DC Collector Current: 24 A
Maximum Operating Temperature: + 150 C
DC Collector/Base Gain hfe Min: 30
Collector- Emitter Voltage VCEO Max: 800 V
Collector-Emitter Saturation Voltage: 3 V
