STMicroelectronics MJD122-1 达林顿晶体管 NPN PWR 达林顿集电极防护

Width: 2.4 mm

Height: 7.2 mm

Length: 6.6 mm

Unit Weight: 340 mg

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: NPN

Pd - Power Dissipation: 20 W

DC Current Gain hFE Max: 12000

Emitter- Base Voltage VEBO: 5 V

Collector- Base Voltage VCBO: 100 V

Maximum DC Collector Current: 5 A

Maximum Operating Temperature: + 150 C

DC Collector/Base Gain hfe Min: 100

Maximum Collector Cut-off Current: 10 uA

Collector- Emitter Voltage VCEO Max: 100 V