STMicroelectronics PD54008-E 射频功率MOSFET 射频功率晶体管 LDMOST 塑料N沟道

Gain: 11.5 dB

Width: 9.4 mm

Height: 3.5 mm

Length: 7.5 mm

Technology: Si

Unit Weight: 3 g

Channel Mode: Enhancement

Output Power: 8 W

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: LDMOS FET

Moisture Sensitive: Yes

Operating Frequency: 1 GHz

Transistor Polarity: N-Channel

Pd - Power Dissipation: 73 W

Vgs - Gate-Source Voltage: + 20 V

Id - Continuous Drain Current: 5 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 65 C

Vds - Drain-Source Breakdown Voltage: 25 V