STMicroelectronics PD55003L-E 射频功率MOSFET 射频功率晶体管 LDMOST系列 N沟道

Gain: 17 dB

Technology: Si

Unit Weight: 3 g

Channel Mode: Enhancement

Output Power: 3 W

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: LDMOS FET

Moisture Sensitive: Yes

Operating Frequency: 1 GHz

Transistor Polarity: N-Channel

Pd - Power Dissipation: 14 W

Vgs - Gate-Source Voltage: + 15 V

Id - Continuous Drain Current: 2.5 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 65 C

Vds - Drain-Source Breakdown Voltage: 40 V