STMicroelectronics SCT10N120 碳化硅MOSFET，单个，N沟道，12安，1.2千伏，0.5欧姆，HiP247

No. of Pins: 3

Channel Type: N Channel

Power Dissipation: 150

Transistor Case Style: HiP247

Drain Source Voltage Vds: 1.2

Operating Temperature Max: 200 °C

Continuous Drain Current Id: 12

Mosfet Module Configuration: Single

Drain Source On State Resistance: 690

Gate Source Threshold Voltage Max: 3.5