STMicroelectronics SCT30N120 SiC MOSFETS 1200V 碳化硅MOSFET

Fall Time: 28 ns

Rise Time: 20 ns

Technology: SiC

Unit Weight: 38 g

Channel Mode: Enhancement

Configuration: Single

Mounting Style: Through Hole

Qg - Gate Charge: 105 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 270 W

Vgs - Gate-Source Voltage: - 10 V, + 25 V

Typical Turn-On Delay Time: 19 ns

Typical Turn-Off Delay Time: 45 ns

Id - Continuous Drain Current: 45 A

Maximum Operating Temperature: + 200 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 80 mOhms

Vds - Drain-Source Breakdown Voltage: 1.2 kV

Vgs th - Gate-Source Threshold Voltage: 3.5 V