STMicroelectronics SCT50N120 SiC MOSFETS 碳化硅功率MOSFET 1200 V，65 A，59 mOhm（典型 TJ = 150°C）

Technology: SiC

Unit Weight: 4.500 g

Channel Mode: Enhancement

Configuration: Single

Mounting Style: Through Hole

Qg - Gate Charge: 122 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 318 W

Vgs - Gate-Source Voltage: - 10 V, + 25 V

Id - Continuous Drain Current: 65 A

Maximum Operating Temperature: + 200 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 52 mOhms

Vds - Drain-Source Breakdown Voltage: 1.2 kV

Vgs th - Gate-Source Threshold Voltage: 1.8 V