STMicroelectronics SCTH35N65G2V-7AG 碳化硅MOSFET，单个，N沟道，45安，650伏，0.045欧姆，H2PAK

Channel Type: N Channel

Power Dissipation: 208

Transistor Case Style: H2PAK

Drain Source Voltage Vds: 650

Operating Temperature Max: 175 °C

Continuous Drain Current Id: 45

Mosfet Module Configuration: Single

Drain Source On State Resistance: 67

Gate Source Threshold Voltage Max: 5