STMicroelectronics SCTH70N120G2V-7 MOS功率晶体管 高压 (>= 200V)
ModelSCTH70N120G2V-7
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Channel Type: N Channel
Power Dissipation: 469
Transistor Case Style: H2PAK
Drain Source Voltage Vds: 1.2
Operating Temperature Max: 175 °C
Continuous Drain Current Id: 90
Mosfet Module Configuration: Single
Drain Source On State Resistance: 30
Gate Source Threshold Voltage Max: 4.9
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