STMicroelectronics SCTL35N65G2V SiC MOSFETS 碳化硅功率MOSFET 650 V，典型55 mOhm 40 A

Fall Time: 14 ns

Rise Time: ns

Technology: SiC

Unit Weight: 180 mg

Channel Mode: Enhancement

Configuration: Single

Mounting Style: SMD/SMT

Qg - Gate Charge: 73 nC

Moisture Sensitive: Yes

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 417 W

Vgs - Gate-Source Voltage: - 10 V, + 22 V

Typical Turn-On Delay Time: 16 ns

Typical Turn-Off Delay Time: 35 ns

Id - Continuous Drain Current: 40 A

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 67 mOhms

Vds - Drain-Source Breakdown Voltage: 650 V

Vgs th - Gate-Source Threshold Voltage: 5 V