STMicroelectronics SCTW35N65G2VAG SiC MOSFETS 汽车级碳化硅功率MOSFET 650 V，45 A，55 mOhm

Technology: SiC

Unit Weight: 4.500 g

Channel Mode: Enhancement

Qualification: AEC-Q101

Mounting Style: Through Hole

Qg - Gate Charge: 73 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 240 W

Vgs - Gate-Source Voltage: - 10 V, + 22 V

Id - Continuous Drain Current: 45 A

Maximum Operating Temperature: + 200 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 67 mOhms

Vds - Drain-Source Breakdown Voltage: 650 V

Vgs th - Gate-Source Threshold Voltage: 5 V