STMicroelectronics SD2932W 射频功率MOSFET N沟MOS 高频/超高频/射频 300W 15dB 175MHz

Gain: 16 dB

Technology: Si

Unit Weight: 10.550 g

Output Power: 300 W

Configuration: Dual

Mounting Style: SMD/SMT

Operating Frequency: 250 MHz

Transistor Polarity: N-Channel

Pd - Power Dissipation: 500 W

Vgs - Gate-Source Voltage: + 20 V

Id - Continuous Drain Current: 40 A

Maximum Operating Temperature: + 150 C

Vds - Drain-Source Breakdown Voltage: 125 V